Measurement of Evolved Hydrogen Volume during Anodization and Its Relationship to the Anodization Process

スポンサーリンク

概要

• 論文の詳細を見る

• It has been demonstrated that two hydrogen molecules evolve per dissolved silicon atom by anodization of silicon in HF solution, although a quantitative analysis has not been performed. The relationship of the volume evolved hydrogen atoms n_H during anodization of silicon in HF solution to several anodization conditions, dissolved silicon atoms n_<Si> and charges n_<hole> were demonstrated. In the case of a degenerated silicon substrate, four hydrogen atoms were released as two gas molecules when a silicon atom was dissolved. In the case of a nondegenerated silicon substrate, with an increated HF concentration, the number of hydrogen atoms evolved per dissolved silicon atom was than four, maintaining the relationship n_H+2.25n_<hole>=8.42n_<Si>. In this study, the relationship between the number of hydrogen atoms evolved and the silicon substrate resistivity was shown experimentally.

• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Motohashi Akira

  Faculty Of Science And Engineering Tokyo Denki University

関連論文

• Identification of Water Molecules in Low Humidity and Possibility of Quantitative Gas Analysis using Porous Silicon Gas Sensor
• A Comparative Study of Visible Photoluminescence from Anodized and from Chemically Stained Silicon Wafers
• Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
• Measurement of Evolved Hydrogen Volume during Anodization and Its Relationship to the Anodization Process

スポンサーリンク