Collection Efficiency Calculation in the Weak Electric Field Limit of Scanning Electron Microscopes (SEM) and Its Application to SEM Image Generation : Techniques, Instrumentations and Measurement

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概要

• 論文の詳細を見る

• Collection efficiencies of secondary electrons in SEM are analyzed theoretically in the weak electric field limit. Collection efficiency is determined by the amount of secondary electrons which can reach the electron detectors. The effects of the screening of local topographies around the incident points are analyzed in order to calculate this collection efficiency. We constructed a weak electric field limit model based on simple assumptions including (1) straight motion of emitted electrons near the sample surface, (2) complete absorption of once-blocked electrons, (3) full detection of emitted electrons departed from the near neighbor of the sample surface. In some special cases, collection efficiencies are calculated analytically. We generated a few SEM images combining them with a model of the secondary electron yield.

• 社団法人応用物理学会の論文
• 1988-08-20

著者

• Kato Makoto

  Systems Development Laboratory Hitachi Ltd.

関連論文

• Disparity Mapping Technique and Fast Rendering Technique for Image Morphing
• Collection Efficiency Calculation in the Weak Electric Field Limit of Scanning Electron Microscopes (SEM) and Its Application to SEM Image Generation : Techniques, Instrumentations and Measurement

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