Electric Resistance Change Mechanism of Indium-Tin Oxide Film During Deposition of Dielectric Oxide Films by RF Magnetron Sputtering : Techniques, Instrumentations and Measurement
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Abe A
National Inst. Materials And Chemical Res.(nimc) Ibaraki Jpn
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Abe Atsushi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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TOHDA Takao
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Tohda Takao
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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MATSUOKA Tomizo
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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NISHIKAWA Masahiro
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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KUWATA Jun
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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FUJITA Yosuke
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
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Nishikawa Masahiro
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Kuwata Jun
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Fujita Yosuke
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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- Influence of Oxygen and Metal Oxide Impurities in ZnS:Mn Film on Characteristics of Electroluminescent Devices : Optical Properties of Condensed Matter
- An XPS Study of Blackening of Indium-Tin Oxide Film during Deposition of Dielectric Films by RF Magnetron Sputtering : Surfaces, Interfaces and Films
- Electric Resistance Change Mechanism of Indium-Tin Oxide Film During Deposition of Dielectric Oxide Films by RF Magnetron Sputtering : Techniques, Instrumentations and Measurement
- A Study of the Crystallographic and Luminescent Characteristics of ZnS:Mn Films Prepared by an RF Magnetron Sputtering Method for AC Thin-Film Electroluminescent Devices : Optical Properties of Condensed Matter
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