A Thin-Film Transistor Using a Reactive-Ion-Beam-Deposited Polycrystalline Silicon Film : Semiconductors and Semiconductor Devices

概要

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A thin-film transistor (TFT) has been fabricated at a maximum temperature of 600℃ using a reactive ion-beam-deposited polycrystalline silicon (polysilicon) film. To improve TFT characteristics, the deposition conditions of polysilicon film have been investigated. It is found that polysilicon film crystallinity can be improved by controlling the energy of ionized species. X-ray diffraction spectra and reflective high-energy electron diffraction (RHEED) patterns indicate that (110)-preferred orientation dominates in the film. The deviation of the (110) textured axis becomes very small as ion energy increases. The field effect mobility of TFTs increases as ion energy increases.
社団法人応用物理学会の論文
1988-06-20