Recovery Enhancement of h_<FE> Due to Pulse Aging for Electron-Irradiated npn Si Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Ohyama H

  Free Electron Laser Research Institute Inc.

• OHYAMA Hidenori

  Department of Electronic Engineering, Kumamoto National college of Technology

• NEMOTO Kuniharu

  Department of Electronic Engineering, Kumamoto National college of Technology

• Nemoto Kuniharu

  Department Of Electronic Engineering Kumamoto National College Of Technology

関連論文

• Measurement of Semiconductor Heterojunction Band Discontinuities Using Free Electron Laser
• Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron Laser
• Measurement of Band Discontinuity at ZnSe/GaAs Boundary Using Free Electron Laser
• Free Electron Laser Annealing of Amorphous Silicon Carbide
• Recovery Enhancement of h_ Due to Pulse Aging for Electron-Irradiated npn Si Transistors

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