Electron Affinity and Effect of Annealing on Heavily Boron-Doped Diamond Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-15
著者
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Kwok Raymund
Department Of Chemistry The Chinese University Of Hong Kong:state Key Laboratory Of Surface Physics
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Lam Yat
Department Of Physics And Materials Science The City University Of Hong Kong:state Key Laboratory Of
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Wong K
Univ. Kansas Ks Usa
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Lee S
Department Of Physics And Materials Science The City University Of Hong Kong:state Key Laboratory Of
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WONG Ka
Department of Physics and Materials Science, The City University of Hong Kong
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LEE Shuit
Department of Physics and Materials Science, The City University of Hong Kong
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LIN Zhangda
Department of Physics and Materials Science, The City University of Hong Kong
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Lee Shuit
Department Of Physics And Materials Science The City University Of Hong Kong:state Key Laboratory Of
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Lin Z
Inst. Physics Chinese Acad. Sci. Beijing Chn
関連論文
- Electron Affinity and Effect of Annealing on Heavily Boron-Doped Diamond Films
- Electron Affinity and Surface Re-ordering of Homoepitaxial Diamond (100)
- Optical Cosine Transform Using Microlens Array and Phase-Conjugate Mirror
- Luminescent Properties of Zn_xSr_S:Ce Thin Film Phosphors for Electroluminescent Devices
- Electroluminescence of Zn_xSr_S:Ce Thin Film Phosphors