Strain Effect on the Band Structure of InAs/GaAs Quantum Dots

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概要

• 論文の詳細を見る

• The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 μm thick InGaAs cap layer was added onto the InAs quantum dot layer to modify the strain in the quantum dots. The exciton energies of InAs quantum dots before and after the relaxation of the cap layer were determined by photoluminescence. When the epilayer was lifted off from the substrate by etching away the sacrifice layer (AlAs) by HF solution, the energy of exciton in the quantum dots decreases due to band gap narrowing resulted from the strain relaxation. This method can be used to obtain much longer emission wavelength from InAs quantum dots.

• 社団法人応用物理学会の論文
• 1999-11-15

著者

• Feng S

  Inst. Physics And Center For Condensed Matter Physics Chinese Acad. Sci. Beijing Chn

• Feng Songlin

  National Laboratory For Superlattices And Microstructures Institute Of Semiconductors Chinese Academ

• Wang Hailong

  National Laboratory For Superlattices And Microstructures Institute Of Semiconductors Chinese Academ

• ZHU Haijun

  National Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Acad

• JIANG Desheng

  National Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Acad

• DENG Yuanming

  National Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Acad

• Zhu Haijun

  National Laboratory For Superlattices And Microstructures Institute Of Semiconductors Chinese Academ

• Deng Yuanming

  National Laboratory For Superlattices And Microstructures Institute Of Semiconductors Chinese Academ

• Jiang Desheng

  National Laboratory For Superlattices And Microstructures Institute Of Semiconductors Chinese Academ

関連論文

• Influence of In_xGa_As(0
• Strain Effect on the Band Structure of InAs/GaAs Quantum Dots

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