Comment on "Lasing Emission from an In_<0.1>Ga_<0.9>N Vertical Cavity Surface Emitting Laser"

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概要

• 論文の詳細を見る

• Someya et al. recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optically pumped laser operation from an InGaN-based vertical cavity surface emitting laser, which they characterize as the "the first unambiguous observation of laser emission by a III-V nitride VCSEL." They claim that our previous report of lasing in a GaN-based vertical cavity laser is attributable to phenomena other than vertical lasing. We argue against the plausibility the authors' unsubstantiated alternative explanation for our results, which forms the basis for their claim.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• Redwing Joan

  Eptronics Corporation

• Anderson Neal

  Department of Electrical and Computer Engineering, University of Massachusetts at Amherst

• Loeber David

  Lasertron

• Tischler Michael

  Epitronics Corporation

• Flynn Jeffery

  ATMI

• Anderson Neal

  Department Of Electrical And Computer Engineering University Of Massachusetts At Amherst

関連論文

• Comment on "Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser"

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