Effect of Oxygen to Argon Ratio on Growth of Bi_4Ti_3O_<12> Thin Films on Ir and IrO_2 Prepared by Radio-Frequency Magnetron Sputtering

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概要

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• Bismuth titanate, Bi_4(Ti_3O_<12>, thin films were grown on Ir/SiO_2/Si and IrO_2/SiO_2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show P_r=+15μC/cm^2 and +12μC/cm^2, respectively.

• 1999-05-15

著者

• Bu Jong

  Microsystems Team Devices And Materials Laboratory Lg Electronics Institute Of Technology

• Kim D

  Devices And Materials Laboratory Lg Corporate Institute Of Technology

• Lee H.

  Devices And Materials Laboratory Lg Corporate Institute Of Technology

• Jo W.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

• CHO S.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

• KIM D.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

• BU J.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

• Bu J

  Lg Electronics Inst. Technol. Seoul Kor

• Jo W

  Devices And Materials Laboratory Lg Corporate Institute Of Technology

• Lee H.M.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

• Cho S.M.

  Devices and Materials Laboratory, LG Corporate Institute of Technology

関連論文

• Effect of Oxygen to Argon Ratio on Growth of Bi_4Ti_3O_ Thin Films on Ir and IrO_2 Prepared by Radio-Frequency Magnetron Sputtering
• Full Integrated Spiral-type Microtransformers on a Silicon Substrate

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