Quantum Chemical Study of Silane Decomposition on Hydrogen-Terminated Si(001) Surfaces

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概要

• 論文の詳細を見る

• The mechanism of SiH_4 adsorption to the bare Si defects in a hydrogen-terminated Si(001) surface is analyzed using ab initio molecular orbital calculations based on a cluster model. The energy barriers for the dissociative adsorption of SiH_4 are estimated to be 0.24 and 0 eV, depending out the environment around the bare Si defects. This result shows that the bare Si defects become the chemisorption sites of SiH_4 in chemical vapor deposition.

• 社団法人応用物理学会の論文
• 1999-05-15

著者

• Hiraoka Y

  Toshiba Corp. Kawasaki Jpn

• HIRAOKA Yoshiko

  Advanced Research Laboratory, Research and Development Center Toshiba Coronation

関連論文

• Quantum Chemical Study of Silane Decomposition on Hydrogen-Terminated Si(001) Surfaces

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