Observation of Negative Differential Resistance in μc-Si:H/a-Si_<1-x>:H Double Barrier Devices

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概要

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• This article presents the experimental results on the preparation and characterization of μc-Si:H/a-Si_<1-x>C_x:H single barrier (SBD) and double barrier devices (DBD). For DBDs, very clear negative differential resistance (NDR) regimes accompanied by oscillations were observed. The observed NDR and oscillations can be explained by the quantum size effect.

• 社団法人応用物理学会の論文
• 1999-03-15

著者

• Carreno M.n.p.

  Laboratory Of Microelectronics Escola De Politecnica University Of Sao Paulo

• YU Zhenrui

  Laboratory of Microelectronics, Escola de Politecnica, University of Sao Paulo

• PEREYRA Ines

  Laboratory of Microelectronics, Escola de Politecnica, University of Sao Paulo

• Pereyra Ines

  Laboratory Of Microelectronics Escola De Politecnica University Of Sao Paulo

• Yu Zhenrui

  Laboratory Of Microelectronics Escola De Politecnica University Of Sao Paulo:(present Address)instit

関連論文

• Observation of Negative Differential Resistance in μc-Si:H/a-Si_:H Double Barrier Devices

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