Properties of Regioregular Poly(3-alkylthiophene) Schottky Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• An investigation into the effect of carrier trapping in polymer Schottky diodes is presented. The diodes have been fabricated using regioregular poly(3-octylthiophene) as the semiconductor and aluminium and indium doped tin-oxide as the rectifying and ohmic contacts respectively. The diodes show rectification ratios up to 3-4 orders of magnitude. Evidence for image-force lowering of the Schottky barrier is observed. The frequency dependence of the capacitance, conductance and dielectric loss is analysed, from which detailed information on the metal/semiconductor interface and the doping level is obtained. An equivalent circuit is proposed.

• 社団法人応用物理学会の論文
• 1998-08-15

著者

• Eccleston William

  Department Of Electrical Engineering And Electronics University Of Liverpool

• MUSA Ismail

  Department of Electrical Engineering and Electronics, University of Liverpool

• Musa Ismail

  Department Of Electrical Engineering And Electronics University Of Liverpool

関連論文

• Properties of Regioregular Poly(3-alkylthiophene) Schottky Diodes

スポンサーリンク