In Situ X-Ray Diffractometry of Cristobalite Formation during High-Temperature Oxidation of SiC Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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Kingetsu T
Japan Ultra-high Temperature Materials Research Institute:(present Address) X-ray Research Laborator
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KINGETSU Toshiki
Japan Ultra-High Temperature Materials Research Institute
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ITO Kenjiro
Japan Ultra-High Temperature Materials Research Institute
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TAKEHARA Masaharu
Japan Ultra-High Temperature Materials Research Institute
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Kingetsu Toshiki
Japan Ultra-high Temparature Materials Research Institute:(present Address) X-ray Research Laborator
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Takehara Masaharu
Japan Ultra-high Temparature Materials Research Institute:(present Address) Carbon Materials Departm
関連論文
- In Situ X-Ray Diffractometry of Cristobalite Formation during High-Temperature Oxidation of SiC Films
- Phase Stability and Mechanical Properties of IrAl Alloys
- Grain-Orientational Dependence of Cristobalite Formation in Polycrystalline β-SiC Films on Thermal Oxidation