Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures

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概要

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• A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIB) for device isolation and ion implantation for the n^+ contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance (g_m) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The characteristics of the MESFET were investigated at high temperatures. This MHSFET can be operated at 4OO℃.

• 社団法人応用物理学会の論文
• 1998-04-15

著者

• Toda Tadao

  Photonic Materials Lab. 0ptoelectronic And Microwave Devices Department Microelectronics Research Ce

• UEDA Yasuhiro

  Photonic Materials Lab., 0ptoelectronic and Microwave Devices Department, Microelectronics Research

• IBARAKI Akira

  Photonic Materials Lab., 0ptoelectronic and Microwave Devices Department, Microelectronics Research

• Ibaraki A

  Photonic Materials Lab. 0ptoelectronic And Microwave Devices Department Microelectronics Research Ce

• Ueda Y

  Photonic Materials Lab. 0ptoelectronic And Microwave Devices Department Microelectronics Research Ce

• Ueda Yasuhiro

  Photonic Materials Lab. 0ptoelectronic And Microwave Devices Department Microelectronics Research Ce

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• Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures

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