Thermal Analysis of Power Devices Wafer-Bonded to High Thermal Conductivity Substrates by Epitaxial Lift-Off

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概要

• 論文の詳細を見る

• Transferring a thin semiconductor device film from its growth substrate to a substrate with better thermal properties is being explored as a way to improve device performance by decreasing the thermal resistance. To quantify this, the thermal behavior of a power device bonded to a high thermal conductivity substrate is modelled by finite element analysis. We calculate the temperature rise for various bonding geometries, and find some general rules to minimize the temperature rise.

• 社団法人応用物理学会の論文
• 1998-03-15

著者

• Chan W

  Univ. Hong Kong Hong Kong Chn

• CHAN Winston

  Department of Electrical Engineering, University of Iowa

関連論文

• Thermal Analysis of Power Devices Wafer-Bonded to High Thermal Conductivity Substrates by Epitaxial Lift-Off

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