Very High Frequency Plasma Enhanced Chemical Vapor Deposition of TiSi_x/TiN_<1-x>Si_x Barrier Films

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Very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) of titaniumsilicide/titaniumnitride barrier films using the silane reduction process with a TiCl_4 source is described. VHF plasma, which is denser than a conventional RF plasma, produces a large number of excited species. The silane reduction process, which supplies excited species such as SiH_x radicals and SiH^+_x ions as reductants in plasma, promotes dissociation of TiCl_4 precursors more than a conventional hydrogen reduction process. Therefor, the VHF-PECVD with the silane reduction process forms high quality titaniumsilicide/titaniumnitride barrier films, which have a low Cl content (<0.2at.%). In the silane reduction process, the Ti-Si bond is simultaneously formed into the bond structure, resulting in depositing Si-containing films of TiSi_x or TiN_<1-x>Si_x. The resistivity of TiSi_x or TiN_<1-x>Si_x is about 100 μΩ・cm. The surface morphology of TiSi_x films is very smooth and the structure of TiN_<1-x>Si_x films is amorphous.
社団法人応用物理学会の論文
1997-09-15