Deposition of Tantalum Oxide Films by UV Laser Reactive Ablation in O_3 Ambient

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概要

• 論文の詳細を見る

• Tantalum oxide films have been deposited on n-type silicon substrate by 355 nm laser ablation of Ta_2O_5 in the presence of O_3. The dielectric and electrical properties of Ta_2O_5 films after annealing treatment have been studied. The results suggest that the film has dielectric constant of 28, and leakage current of 10^<-7> A/cm^2 at an applied electric field of 500 kV/cm. The capacitance-voltage characteristics of the Al/Ta_2O_5/n^+Si capacitors exhibit an interface trap density and border trap density of 3×10^<11> eV^<-1>cm^<-2> and 1.2×10^<11> cm^<-2>, respectively. The effect of ambient gases during laser deposition on the border trap densities of annealed films are also discussed.

• 社団法人応用物理学会の論文
• 1997-11-15

著者

• Lu Fang

  Physics Department Fudan University

• Fu Zhengwen

  Laser Chemistry Institute Fudan University

• ZHOU Mingfei

  Laser chemistry Institute, Fudan University

• QIN Qizong

  Laser chemistry Institute, Fudan University

• ZHANG Shenkun

  Physics department, Fudan University

• Qin Qizong

  Laser Chemistry Institute Fudan University

• Zhou M

  Chartered Semiconductor Manufacturing Ltd. Singapore

• Zhang Shenkun

  Physics Department Fudan University

関連論文

• Deposition of Tantalum Oxide Films by UV Laser Reactive Ablation in O_3 Ambient

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