Dark-Field Contrast of Elements in High-Voltage Electron Microscopy

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概要

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• A new and simple expression developed by us has been used for the estimation of contrast of thin amorphous specimens in the tilted-beam mode of dark field (DF) imaging using a conventional transmission electron microscope (CTEM). DF contrasts calculated for thin amorphous films of some representative elements in the electron accelerating voltage range between 0.1 to 3.0 MV have been compared with the corresponding bright field (BF) contrasts. The magnitude of the gain in contrast in the DF mode compared with BF one, observed over a wide range of accelerating voltage (φ), microscope aperture (α) and atomic number (Z) of elements, has been highlighted.

• 社団法人応用物理学会の論文
• 1997-05-15

著者

• Bhattacharya D.

  Department Of Biochemistry And Biophysics University Of Kalyani

• BHAKAT P.

  Department of Biochemistry and Biophysics, University of Kalyani

• Bhakat P.

  Department Of Biochemistry And Biophysics University Of Kalyani

関連論文

• Dark-Field Contrast of Elements in High-Voltage Electron Microscopy
• Image contrast of biological materials in high-voltage electron microscopy
• ON ABSTRACTION OF DIFFERENTIABLE MANIFOLD

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