Breakdown Mechanism of Oxide Grown on Czochralski Silicon Wafers

概要

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The breakdown mechanism of oxide grown on Czochralski (Cz) silicon wafers was studied using a combination of copper decoration and transmission electron microscopy (TEM) observation. Recently, crystal defects with octahedral voids were found on the surface and in bulk silicon of as-grown Cz wafers. This result led researchers to infer that oxide breakdown occurs due to oxide thinning at the corner of the octahedral structure or heavy metal gettering at the void. Our study, however, does not support those models. We propose a new model that the crystal defect in the silicon wafer is filled with an "imperfect silicon", not a void, and that the oxide breakdown occurs due to the formation of degraded oxide which is made of the imperfect silicon, during oxidation.
社団法人応用物理学会の論文
1997-04-15