Electrical Properties of BaTiO_3 Thin Film Grown by the Hydrothermal-Electrochemical Method
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概要
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Crystalline BaTiO_3 thin films were prepared directly on Ti substrates in aqueous solutions of Ba(OH)_2 at 150℃ by a hydrothermal-electrochemical method and their electrical properties for capacitors were measured. The leakage current-voltage characteristics exhibited rectifications, the degree of which depended on the top electrodes used. Resistivities as high as 10^<12>Ω・cm were obtained in the voltage range up to 2 V for the 0.40-μm-thick BaTiO_3 thin film and its breakdown voltage was higher than 12 V. The grown films were paraelectric with dielectric constants of 340-350 and dielectric losses of 7-10% at 1kHz, 0.1V_<rms>, and 25℃. The capacitance variation with dc bias voltage from -2.5 to +2.5V was 9% of the zero-bias value, and that with temperature from -60°to 130℃ was 24% of the room-temperature value.
- 社団法人応用物理学会の論文
- 1997-03-15
著者
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YOSHIMURA Masahiro
Materials and Structures Lab., Tokyo Institute of Technology
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KAJIYOSHI Koji
Research Laboratory of Hydrothermal Chemistry, Faculty of Science, Kochi University
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Kajiyoshi K
Research Laboratory Of Hydrothermal Chemistry Faculty Of Science Kochi University
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Kajiyoshi Koji
Laboratory Of Hydrothermal Chemistry Faculty Of Science Kochi University
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Yoshimura Masahiro
Materials And Structures Lab. Tokyo Inst. Of Technol.
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Sakabe Yukio
Functional Materials Research Department Group Ii R&d Division Murata Manufacturing Co. Ltd.
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Kajiyoshi Koji
Research Laboratory Of Hydrothermal Chemistry Faculty Of Science Kochi University
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KAJIYOSHI Koji
Functional Materials Research Department, Group II, R&D Division, Murata Manufacturing Co., Ltd.
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Yoshimura Masahiro
Material And Structure Laboratory Tokyo Institute Or Technology
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