Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters
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概要
- 論文の詳細を見る
The impulse response of interdigitated Inlays metal-semiconductor-metal photodetectors (MSMPDs) is modeled using a two dimensional transit-time calculation coupled with an equivalent circuit model of the intrinsic and parasitic elements of the MSMPDs. The simulated and experimental bandwidths of InGaAs MSMPDs with resistive transparent indium-tin-oxide and low-resistivity opaque titanium/gold electrodes are in excellent agreement and were found to be 6 and 11 GHz, respectively. The electrode width and spacing of these devices are 3 μm and the active area is 2500 μm^2. This model aids in the design of MSMPDs with various electrode geometries, electrode materials, semiconductor materials, and methods of illumination.
- 社団法人応用物理学会の論文
- 1997-02-15
著者
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Seo J‐w
Hongik Univ. Seoul Kor
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Seo Jong-wook
School Of Electronic And Electrical Engineering Hongik University
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Arafa Mohamed
Center For Compound Semiconductor Microelectronics And Department Of Electrical And Computer Enginee
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Adesida Ilesanmi
Center For Compound Semiconductor Microelectronics And Department Of Electrical And Computer Enginee
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Fay Patrick
Center For Compound Semiconductor Microelectronics And Department Of Electrical And Computer Enginee
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WOHLMUTH Walter
Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Enginee
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Wohlmuth Walter
Center For Compound Semiconductor Microelectronics And Department Of Electrical And Computer Enginee
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- Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters