Abnormal Surge Responses in Bi-directional Thyristors at High Surge Current

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概要

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• Abnormal surge response in bi-directional thyristors at high surge currents is analyzed. This phenomenon presents an abrupt increase in the on-voltage with a peak. As the applied surge current increases, the peak value of the on-voltage becomes higher, and the peak occurrence time decreases. The on-voltage increase is caused by the temperature dependence of Auger recombination and carrier mobility. The decrease in mobility and lifetime governed by the Auger effect are enhanced due to self-heating caused by the surge current. The analysis agrees reasonably well with theoretical considerations.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• Shimoda Yoshio

  Optical Hardware Systems Laboratory Ntt Opto-electronics Laboratories

• Shimoda Yoshio

  Optical Hardware System Laboratory Ntt Interdisciplinary Research Laboratories

• Satoh Hidetaka

  Optical Hardware Systems Laboratory Ntt Opto-electronics Laboratories

• Satoh Hidetaka

  Optical Hardware System Laboratory Ntt Interdisciplinary Research Laboratories

関連論文

• Waveform Dependence of Surge-handling Capability and Failure Analysis for Semiconductor Lightning Surge Protectors
• Abnormal Surge Responses in Bi-directional Thyristors at High Surge Current
• The Influence of Cell Size on Lightning Surge Protection Semiconductor Devices

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