Study of Microwave Transient Photo Conductivity on Single and Polysilicon Using Cavity Perturbation Tehnique

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概要

• 論文の詳細を見る

• Microwave cavity perturbation technique has been employed for the study of photo conductive transients in semiconductors. A new approach of measuring the quality factor of tire microwave cavity using cavity perturbation technique (reported in Rev. Sci. Instrum. 65 (1994) 453] is incorporated for this purpose. Measurements with this contactless technique on carrier lifetimes in various single and polysilicon and the analysis of the observed microwave transient photo conductivity decay with temperature is reported.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Subramanian V

  Indian Inst. Of Technol. Chennai Ind

• Subramanian V.

  Department Of Physics Indian Institute Of Technology

• Sobhanadri J.

  Department Of Physics Indian Institute Of Technology

関連論文

• Nuclear Quadrupole Resonance in Anhydrous Barium Chlorate
• Study of Microwave Transient Photo Conductivity on Single and Polysilicon Using Cavity Perturbation Tehnique

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