Neutral-Beam-Assisted Etching System for Low-Damage SiO_2 Etching of 8-Inch Wafers

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概要

• 論文の詳細を見る

• A novel neutral-beam-assisted etching apparatus has been developed for large-diamter etching. Neutral radicals from halide molecules and energetic neutral beams are irradiated on the specimen surface. The etching reaction of these neutral radicals is enhanced by neutral-beam bombardment. The neutral-beam source and the neutral-radical source are produced from a magneto-microwave plasma source. These plasmas are arranged in tandem in front of the specimen. This arrangement enables highly uniform supply of neutral radicals over a large area. This etching system was applied to SiO_2 etching using Ar and CHF_3 mixed gas. The SiO_2 etch rate was 76 nm/min, and the etch rate uniformity was within ±7.4% for an 8-inch-diameter specimen and ±3.4% for a 6-inch-diameter specimen. In addition, highly anisotropic etching shapes of submicron patterns were obtained.

• 社団法人応用物理学会の論文
• 1996-03-15

著者

• Mizutani Tatsumi

  Hitachi Kasado Works

• YUNOGAMI Takasi

  Semiconductor & Integrated Circuits Division, Hitachi, Ltd.

• Yokogawa Ken'etsu

  Central Research Laboratory Hitachi Ltd.

• Yunogami Takasi

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

関連論文

• Neutral-Beam-Assisted Etching System for Low-Damage SiO_2 Etching of 8-Inch Wafers

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