Photoluminescence Investigation of Doped Asymmetric Coupled Quantum Wells

概要

論文の詳細を見る
We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al_<0.28>Ga_<0.72>As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al_<0.2>Ga_<0.8>As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.
社団法人応用物理学会の論文
1995-10-15