Se-doped GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Se-doped GaN films are grown for the first time by low-pressure metalorganic chemical vapor deposition (LPMOCVD), in which H_2Se is used as the Se source gas. Effects of Se doping on electrical properties of GaN films are reported. Se atoms tend to out-diffuse to the surface of the GaN film at high temperature. The N atomic percentage is influenced by the incorporation of H_2Se in the MOCVD process. The carrier concentration was found to be significantly affected by the surface defects which develop at high H_2Se dosages. The highest free electron concentration obtained is about 1.5×10^<18> cm^<-3>. Increasing the growth temperature from 1000℃ to 1050℃ reduces the maximum carrier concentration to about 7×10^<17> cm^<-3>.

• 社団法人応用物理学会の論文
• 1995-10-15

著者

• PAN F.

  National Nano Device Laboratories

• Feng M.

  Institute Of Materials Science And Engineering National Chiao Tung University And National Nano Devi

• GUO J.

  Institute of Modern Physics, Chinese Academy of Sciences

• Pan F.

  National Nano Device Laboratory

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