Structural Study of Molten Silicon by Energy Dispersive X-Ray Diffraction Method

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概要

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• Energy dispersive X-ray diffraction (EDXD) measurement on molten silicon has been carried out at three temperatures of 1693 K 1733 K and 1768 K. Three structure factors of molten silicon show the characteristic shoulder on the higher-wave-vector side of the first peak. Amplitudes of the structure factors in the first and second peaks are smaller than those obtained by the angular dispersive X-ray diffraction (ADXD) method. The analysis of the distribution function (RDF) shows that the coordination number of the first two neighbors is 5.7(3.7+2.0) at 1693 K, 5.4(3.7+1.7) at 1733 K and 5.7(3.7+2.O) at 1768 K. These values suggest that the temperature dependence of the local atomic rearrangement is very weak in the temperature region investigated here.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Takeda Susumu

  Kimura Metamelt Project Erato Jrdc

関連論文

• Effect of Gallium Addition on Density Variation of Molten Silicon
• High Temperature X-Ray Diffraction Study of Melt Structure of Silicon
• Structural Analysis of Molten Bismuth Germanate Compounds
• Structural Study of Molten Silicon by Energy Dispersive X-Ray Diffraction Method

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