Detection of an Oxygen-Excessive Layer in Thermally Grown Silicon Oxide

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概要

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• This paper describes depth profiling of the oxygen (O) content of thermally grown silicon oxide by Auger electron spectroscopy (AES). In this approach, the Auger peak area value obtained by integrating the first-derivative spectrum is used as the signal intensity. After profiling of a number of similar samples, the average values of signal intensities for the same depths are plotted to obtain smooth profiles. The O signal intensities are higher in the oxide/substrate interface region than the bulk oxide region. X-ray photoelectron spectroscopy (XPS) profiling confirms an increase in O signal intensity in the same region. This region approximately corresponds to a structural transition layer of a newly formed oxide.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Watanabe Yoshio

  Ntt Lsi Laboratories

関連論文

• Detection of an Oxygen-Excessive Layer in Thermally Grown Silicon Oxide

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