Damage in a GaAs Surface Caused by RF-Sputter Deposition of SiO_2

概要

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Structural and optical changes in a GaAs surface due to rf sputter deposition of SiO_2 were investigated by means of transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). A blight-field image indicates the occurrence of a surface-modified layer of about 7-9 nm thickness in the GaAs surface after SiO_2 deposition, at an rf power density of 1.7 W/cm^2. A lattice image shows the increased interfacial roughness between GaAs and SiO_2 upon the deposition. The thickness of the optically-modified layer in SiO_2-deposited GaAs is estimated by SE, using the amorphous semiconductor dispersion model. At the lower rf power deposition, the extents of damage estimated by TEM and SE were found to be enhanced. Both rf-power and SiO_2-deposition-rate dependences of damage suggest that impingement by non-depositing particles in the initial stage causes surface modification.
社団法人応用物理学会の論文
1995-09-15