Contact Resistivity and Adhesion of Ni/AuGe/Ag/Au Ohmic Contact Directly to n-Type AlGaAs
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概要
- 論文の詳細を見る
The direct ohmic contact to AlGaAs, Ni/AuGe/Ag/Au=5/120/100/580 nm has been studied. Contact resistivity of 3.8×10^<-5>Ωcm^2 is obtained after thermal treatment for 10 min at 450℃. This is one order lower than that of the conventional Ni-Ge-Au system. The new metallization also indicates strong adhesion on SiN_x film, does not peel off even after thermal treatment during all device processes and withstands the wire bonding process. We conclude that the metallization is useful and applicable for AlGaAs-related devices.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Ohta Hirokazu
Materials And Devices Department Research And Development Center Eastman Kodak (japan) Ltd.
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Ehara T
Shinshu Univ. School Of Medicine Matsumoto
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EHARA Takashi
Materials and Devices Department, Research and Development Center, Eastman Kodak (Japan) Ltd.
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SHIBATA Naoki
Materials and Devices Department, Research and Development Center, Eastman Kodak (Japan) Ltd.
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NUKUI Tohru
Materials and Devices Department, Research and Development Center, Eastman Kodak (Japan) Ltd.
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KAZUNO Tadao
Materials and Devices Department, Research and Development Center, Eastman Kodak (Japan) Ltd.
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Kazuno Tadao
Materials And Devices Department Research And Development Center Eastman Kodak (japan) Ltd.
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Shibata Naoki
Materials And Devices Department Research And Development Center Eastman Kodak (japan) Ltd.
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Nukui Tohru
Materials And Devices Department Research And Development Center Eastman Kodak (japan) Ltd.