The Effect of Ionizing Radiation Damage on the Transconductance of Short Channel Insulated Gate Field Effect Transistors

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概要

• 論文の詳細を見る

• This paper describes the effect of ionizing radiation on the transconductance of short channel Insulated Gate Field Effect Transistors. Devices having channel lengths ranging from 2 μm to 0.5 μm and a constant channel width of 10 μm were irradiated from 3 Mrad (SiO_2) up to 8 Mrad (SiO_2) and comparisons were made to an unirradiated control set. An initial increase in transconductance was noted up to 3 Mrad (SiO_2), followed by a degradation at higher doses. At heavy irradiation levels, saturation was noted in degradation, with shorter n-channel devices showing some rebound. The mechanisms behind these variations were examined, and a qualitative model of defect generation was developed.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• Bhattacharya Pradeep

  Fab 25 Advanced Micro Devices Inc.:department Of Electrieal Engineering Southern University

• Subramanian V

  Indian Inst. Technol. Madras Ind

• Subramanian Vivek

  Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State Universit

関連論文

• The Effect of Ionizing Radiation Damage on the Transconductance of Short Channel Insulated Gate Field Effect Transistors

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