Thermoelectric Power Studies on 1% Excess Te Doped Pb_<0.8>Sn_<0.2>Te Thin Films

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概要

• 論文の詳細を見る

• Thin films of Pb_<0.8>Sn_<0.2>Te of thicknesses varying between 360 Å and 3400 Å have been prepared by flash evaporation on cleaned glass substrates held at room temperature. Thermoelectric power (TEP) of these films has been evaluated by measuring the thermal emf developed by the integral method in the temperature range 300 K to 500 K. It has been found that TEP of all the films is positive and increases with temperature in the low temperature region and tends to saturate at high temperatures, beyond 400 K. This has been attributed to the pinning of the Fermi level at high temperatures. It was also found that these films did not show the expected linear dependence of TEP on the inverse film thickness.

• 社団法人応用物理学会の論文
• 1995-02-15

著者

• Das V

  Indian Inst. Technol. Madras Ind

• Das V.Damodara

  Thin Film Laboratory, Department of Physics, Indian Institute of Technology

• Bahulayan C.

  Thin Film Laboratory, Department of Physics, Indian Institute of Technology

• Bahulayan C.

  Thin Film Laboratory Department Of Physics Indian Institute Of Technology

関連論文

• Thermoelectric Power Studies on 1% Excess Te Doped Pb_Sn_Te Thin Films

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