Closed-Chamber Chemical Vapor Deposition : New Cyclic Method for Preparation of Microcrystalline Silicon Films

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概要

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• A new cyclic chemical vapor deposition (CVD) process for low-temperature preparation of microcrystalline silicon and its alloys is proposed. The cycle includes an a-Si:H layer deposition step and a hydrogen-radical treatment step. The H-treatment step is carried out under closed-chamber CVD (CC-CVD). It provides conservation of Si mass at an equilibrium between H-etching and redeposition. Thus, films of high crystallinity can be achieved. The advantages are a high deposition rate, high reactive gas utilization and precise control of the film structure. In situ monitoring of the plasma emission spectrum has been used to investigate the CC-CVD process features. The films are characterized by Raman spectroscopy, scanning electron microscopy, temperature-dependent dark conductivity, and infrared transmission spectroscopy.

• 社団法人応用物理学会の論文
• 1994-08-15

著者

• Fischer Thomas

  Technical University Of Munich Physics Department E16

• KOYNOV Svetoslav

  Technical University of Munich, Physics Department E16

• SCHWARZ Reinhard

  Technical University of Munich, Physics Department E16

• GREBNER Stefan

  Technical University of Munich, Physics Department E16

• MUNDER Herbert

  Forschungszentrum Julich, Institut fur Schicht- und Ionentechnik

• Grebner Stefan

  Technical University Of Munich Physics Department E16

• Munder Herbert

  Forschungszentrum Julich Institut Fur Schicht- Und Ionentechnik

• Schwarz Reinhard

  Technical University Of Munich Physics Department E16

• Koynov Svetoslav

  Technical University Of Munich Physics Department E16:bulgarian Academy Of Sciences Cl-senes

関連論文

• Closed-Chamber Chemical Vapor Deposition : New Cyclic Method for Preparation of Microcrystalline Silicon Films

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