Direct Measurement of Surface Charging during Plasma Etching (<Special Issue> Plasma Processing)

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概要

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• An on-wafer surface potential probe was developed for the direct real-time measurement of the local charging on a wafer surface during plasma etching. Pressure and rf power dependencies of the surface charging potential were measured in a nonuniform magnetron plasma by this probe. The variation in etching profiles was also observed by scanning electron microscopy (SEM). The measured surface charging potential was consistent with previously expected values from the profile distortion and device damage results. The local surface charging and the profile distortion increased as the pressure was reduced, while they were insensitive to the rf power change.

• 社団法人応用物理学会の論文
• 1994-07-30

著者

• Murakawa Shigemi

  Center For Integrated Systems Stanford University

• Mcvittie James

  Center For Integrated Systems Stanford University

関連論文

• Mechanism of Surface Charging Effects on Etching Profile Defects
• Direct Measurement of Surface Charging during Plasma Etching ( Plasma Processing)

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