Stress and Resistivity of Ta-Mo and Ta-W Sputtered Thin Films

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概要

• 論文の詳細を見る

• Mo or W doping of sputtered Ta films resulted in the phase transition from tetragonal to cubic and significantly varied stress and resistivity. Prior to complete transition, films consisting of two phases exhibited stress relaxation, and tended to transition to the cubic phase with subsequent annealing. With the complete transition to the cubic phase, films showed an increase in stress. Resistivity was approximately 10-30 μΩ・cm for cubic films, while that for tetragonal films was measured to be 120 μΩ・cm. We determined pure Mo films to be suitable as electrodes due to their lower resistivity, lower stress and better thermal stability in Ta-Mo alloy systems. The proposed Ta-Mo and Ta-W films exhibited the very small stress required for utilization as X-ray absorbers for X-ray photolithographic masks caused by the relaxation due to coexistence of cubic and tetragonal phases.

• 社団法人応用物理学会の論文
• 1994-07-15

著者

• Takeda Mamoru

  Display Technology Research Laboratory Components And Devices Research Center Matsushita Electric In

• Matsuoka Tomizo

  Display Technology Research Laboratory Components And Devices Research Center Matsushita Electric In

• OSHIO Shozo

  Display Technology Research Laboratory, Components and Devices Research Center, Matsushita Electric

• Oshio Shozo

  Display Technology Research Laboratory Components And Devices Research Center Matsushita Electric In

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• Stress and Resistivity of Ta-Mo and Ta-W Sputtered Thin Films

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