An Integrated Atomic Force Microscopy/Scanning Tunneling Spectroscopy Microscope and Its Application for p-n Junction Observations

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概要

• 論文の詳細を見る

• We have developed an integrated atomic force microscopy (AFM)/scanning tunneling spectroscopy (STS) microscope that can simultaneously obtain, for the same area, a topographic image and current imaging tunneling spectroscopy (CUTS) images derived from current-voltage (I-V) characteristics on insulator-mixed surfaces. The I-V characteristics and CITS images of p-n junctions are stable and clearly show the differences between p^--and n^+-regions, and thus these regions can easily be distinguished. The characteristics can be explained by theoretical energy-band analysis. Since the current decreases with time after HF cleaning, the current changes are also probably related to changes in native oxide thickness. Studies of impurity concentration distribution and oxide growth on silicon surfaces are found to be possible by integrated AFM/STS microscopy.

• 社団法人応用物理学会の論文
• 1994-06-30

著者

• Nakajima Shigeru

  Ntt Lsi Laboratories

• YAMAZAKI Kenji

  NTT LSI Laboratories

関連論文

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• An Integrated Atomic Force Microscopy/Scanning Tunneling Spectroscopy Microscope and Its Application for p-n Junction Observations

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