Enhanced Blue-Light Emission from an Indium-Treated Porous Silicon Device

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概要

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• We present the technology and the performance of blue-light-emitting porous silicon devices. The devices are fabricated using porous silicon formation with UV-light applied. Furthermore, indium is electroplated into the pores, causing an increase of the quantum efficiency. The blue electroluminescence exhibits a peak maximum around 480 nm and an external quantum efficiency of 0.5 X 10^<-2%>. Rutherford backscattering spectroscopy (RBS) was employed to measure the stoichiometry and the depth profile of indium in the porous layer.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Lang Walter

  Fraunhofer-institute For Solid State Technology

• Kozlowski Frank

  Fraunhofer-institute For Solid State Technology

• STEINER Peter

  Fraunhofer-Institute for Solid State Technology

• WIELUNSKI Marek

  Ruhr Universitat Bochum, Dynamitron-Tandem-Laboratorium, Universitatsstrabe

• Wielunski Marek

  Ruhr Universitat Bochum Dynamitron-tandem-laboratorium Universitatsstrabe

関連論文

• Enhanced Blue-Light Emission from an Indium-Treated Porous Silicon Device

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