Excitation and Radiative Efficiencies in ZnS:Mn Thin Film Electroluminescent Devices Prepared by Reactive Radio-Frequency Magnetron Sputtering

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概要

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• Thin film electroluminescent (EL) devices have been prepared by reactive radio-frequency magnetron sputtering. The excitation efficiency η_<exc> and the radiative efficiency η_<rad> have been studied by analyzing the light response of the devices under short-pulse excitations. The influence of the preparation conditions on these partial efficiencies has been examined systematically. Partial efficiency measurements not only provide a method to characterize the quality of the active layer, but also permit us to obtain enlightening information on the electrooptical properties of the EL devices prepared by sputtering.

• 社団法人応用物理学会の論文
• 1994-10-15

著者

• Benoit Jacques

  Laboratoire D'acoustique Et Optique De La Matiere Condensee Universite Pierre Et Marie Curie

• Benalloul P

  Univ. Pierre Et Marie Curie Paris Fra

• Benalloul Paul

  Laboratoire D'acoustique Et Optique De La Matiere Condensee Universite Pierre Et Marie Curie

• Xian Hong

  Laboratoire D'acoustique Et D'optique De La Matiere Condensee Universite P. & M. Curie

• Barthou C

  Univ. Pierre Et Marie Curie Paris Fra

• BARTHOU Charles

  Laboratoire d'Acoustique et d'0ptique de la Matiere Condensee, Universite P.etM. Curie

関連論文

• Ce-doped TiO_2 Insulators in Thin Film Electroluminescent Devices
• Transient Measurements of the Excitation Efficiency in ZnS-based Thin Film Electroluminescent Devices
• High Contrast Thin Film Electroluminescent Devices on Textured Glass
• Excitation and Radiative Efficiencies in ZnS:Mn Thin Film Electroluminescent Devices Prepared by Reactive Radio-Frequency Magnetron Sputtering

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