Structural Characteristics of Combination Oxide Consisting of Dry Thermal SiO_2 and Sputtered SiO_2

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概要

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• The infrared transmission characteristics of "combination oxides" consisting of initially growing a thin thermal SiO_2 layer (to achieve interface properties equivalent to thermal SiO_2) followed by sputter deposited SiO_2, for bulk oxide growth (a low temperature deposition process), are studied to see the feasibility of substituting these oxides for dry thermal silicon oxides. In this study, "combination oxides", grown on both p- and n-type silicon substrates were compared with dry thermal oxides of identical thicknesses. The infrared transmission results indicate that the vibration frequency (v) and full-width at half-maximum (FWHM) of dominant IR active mode of combination oxides differ only by ≈7 cm^<-1> from those of dry thermal oxides, thereby indicating a comparable stoichiometery of the former oxides to the latter.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Ashokan Renganathan

  Solid State Physics Laboratory Lucknow Road

• BHAN Rajinder

  Solid State Physics Laboratory, Lucknow Road

• MATHUR Parmatma

  Department of Physics and Astrophysics, University of Delhi

• Bhan Rajinder

  Solid State Physics Laboratory Lucknow Road

• Mathur Parmatma

  Department Of Physics And Astrophysics University Of Delhi

• Mathur Parmatma

  Department of Electronic Science, University of Delhi South Campus

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