ZnS:Mn Electroluminescent Thin Films Prepared by Multisource Deposition under Controlled Sulfur Vapor Pressure
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概要
- 論文の詳細を見る
ZnS:Mn thin-film electroluminescent (TFEL) devices have been prepared by using a multisource deposition (MSD) method. A new technique of sulfur vapor pressure control has been developed for the thin-film growth at a high sulfur vapor pressure. Growth kinetics of ZnS:Mn thin films on the sulfur vapor pressure have been studied. It has been found that at sulfur vapor pressure higher than 0.1 Pa, the growth rate is limited by the effective amount of the Zn flux. The ZnS:Mn film grown at the sulfur vapor pressure of 0.85 Pa shows a smooth surface and has a uniform grain size of about 200 nm. The ZnS:Mn TFEL device shows the luminance of 300 cd/m^2 and the efficiency of 3.5 lm/W at 30 V above the threshold voltage of 180 V with 60 Hz drive.
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Ohmi Koutoku
Research Division Komatsu Ltd.:(present Address)tottori University
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Nire Takashi
Research Division Komatsu Ltd.
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MATSUNO Akira
Research Division, KOMATSU Ltd.
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MIYAKOSHI Atsushi
Research Division, KOMATSU Ltd.
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Matsuno Akira
Research Division Komatsu Ltd.
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Matsuno Akira
Research Center For Nanodevices And Systems Hiroshima University
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Miyakoshi Atsushi
Research Division Komatsu Ltd.
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Matsuno Akira
Reseach Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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- ZnS:Mn Electroluminescent Thin Films Prepared by Multisource Deposition under Controlled Sulfur Vapor Pressure
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