GaAs/AlGaAs Quantum Well Infrared Detectors with an Integral Silicon Grating
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概要
- 論文の詳細を見る
Single quantum well GaAs/AlGaAs infrared photodetectors (QWIPs) with an integral silicon grating have been fabricated. An enhancement of radiation coupling efficiency over a 45° bevel device is observed at 77 K. In addition, this technology enables the device to detect normally incident infrared radiation from the substrate side and makes possible the practical packaging of detector arrays.
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Chi G‐c
National Central Univ. Chung-li Twn
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Chi Gou-chung
Optoelectronics And Systems Laboratories Itri
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Juang Cheng
Electronics Department Ming Hsin College Of Technology
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Juang Cheng
Electronics Department Ming Hsin College
関連論文
- Chaotic Behaviors of Bistable Laser Diodes and Its Application in Synchronization of Optical Communication : Optics and Quantum Electronics
- Multiple Tunneling and Chaos in Asymmetrically Coupled Quantum Wells
- GaAs/AlGaAs Quantum Well Infrared Detectors with an Integral Silicon Grating
- Laser Chaos Induced by Delayed-Feedback and External Modulation