Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures

概要

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The transit frequency f_T of SiGe-heterobipolar transistors (HBT's) was increased from 20 GHz to TOO GHz. This was mainly achieved by thickness reduction of the double heterojunction SiGe-base from 65 nm to 25 nm. The complete vertical structure of the SiGe-HBT's (collector, base, emitter, emitter contact) was grown in one run by Si molecular beam epitaxy (Si-MBE). The growth temperature was varied from 650℃ at the collector side to 325℃ at the emitter contact side. The different n-type doping levels (10^<17>/cm^3, 10^<18>/cm^3, 10^<20>/cm^3) were obtained by applying three different Sb-doping techniques (secondary implantation, adatom pre build-up, low temperature doping). The p-type base was doped with boron. The doping level in the base (6×10^<19>/cm^3) exceeded the emitter doping level by a factor of 30 (doping level inversion).
社団法人応用物理学会の論文
1994-04-30