Photoluminescence from Localized Excitons in Si/Ge Superlattices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Wang K
Univ. California Las Angeles California Usa
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Arbet-engels Vincent
Electrical Engineering Department 66-147b Eng. Iv University Of California
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HARTUNG Joachim
Physics Department, King's College London
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HIGGS Victor
Physics Department, King's College London
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DAVIES Gordon
Physics Department, King's College London
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LIGHTOWLERS E.C.
Physics Department, King's College London
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WANG K.L.
Electrical Engineering Department, 66-147B Eng. IV, University of California
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Lightowlers E.c.
Physics Department King's College London
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Davies Gordon
Physics Department King's College London
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Hartung Joachim
Physics Department King's College London
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Higgs Victor
Physics Department King's College London
関連論文
- Photoluminescence from Localized Excitons in Si/Ge Superlattices
- Observation of Resonance by Individual Energy Lavels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes