Growth, Characterization and Device Fabrication of Boron Delta-Doped Structures by Si-Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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SARDELA Mauro
Department of Physics, Linkoping University
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RADAMSON Homayon
Department of Physics, Linkoping University
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HANSSON Goran
Department of Physics, Linkoping University
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Hansson G
Department Of Physics Linkoping University
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HULTMAN Lars
Department of Physics, Linkoping University
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Sardela Mauro
Department Of Physics Linkoping University
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Hansson Goran
Department Of Physics And Measurement Technology Linkoping University
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Radamson Homayon
Department Of Physics Linkoping University
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Hultman Lars
Department Of Physics Linkoping University
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Hultman Lars
Department Of Physics Chemistry And Biology (ifm) Linkoping University
関連論文
- Thermal Stability Characterization of Doped Layers and Heterostructures Grown by Si-Molecular Beam Epitaxy
- Growth, Characterization and Device Fabrication of Boron Delta-Doped Structures by Si-Molecular Beam Epitaxy
- Modelling and Application of Synchronization of Nucleation by Means of Intermittent Radiant Heating
- Spontaneous Formation of AlInN Core-Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
- Bandgap Engineering and Optical Constants of Y