Translational-Energy-Induced Anisotropic Etching of Poly-Si by Cl_2 Supersonic Molecular Beams

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概要

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• A high-translational-energy Cl_2 neutral beam created in a Cl_2-seeded He supersonic molecular beam has been applied to poly-Si etching. Translational-energy-induced etching was observed at a substrate temperature of 530℃ with a translational energy threshold of 0.7 eV. From the temperature dependence of the etch rates, the etching reaction was found to be composed of two thermal desorption processes with activation energies of 2.8 eV and 0.9 eV, corresponding to gas etching and translational-energy-induced etching, respectively. Anisotropic etching profiles were achieved with complete selectivity against SiO_2 due to the fact that the etching was induced by translational energy.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Nishiyama Iwao

  Microelectronics Research Laboratories Nec Corporation

• Teraoka Yuden

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Translational-Energy-Induced Anisotropic Etching of Poly-Si by Cl_2 Supersonic Molecular Beams

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