Strain-Generated Internal Fields in Pseudomorphic (In, Ga)As/GaAs Quantum Well Structures on {11l} GaAs Substrates

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概要

• 論文の詳細を見る

• A study of the piezoelectric effect in pseudomorphic (In, Ga)As/GaAs multiple quantum well structures grown on GaAs substrates oriented in the general [11l] direction is reported. Theoretical calculations of the transverse polarization fields and longiturdinal electric fields are presented. The calculated electric fields for the [111]-and [112]-oriented structures are compared to experimental estimates reported by other workers. Additional results to support the validity of the method are provided for structures on (110) surfaces intentionally misoriented by 6° toward the (111)B surface. The pseudomorphic (In, Ga)As/CaAs multiple quantum well structures grown on the vicinal (110) GaAs substrates were characterized by photoluminescence. It is shown that the luminescent peak intensity from these structures exhibits a spectral blue-shift with increasing excitation density. This shift is interpreted to be a manifestation of the screening of the internal, strain-induced field by photogenerated carriers.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Towe E

  Univ. Virginia Charlottesville Va Usa

• Towe E.

  Laboratory For Optics And Quantum Electronics Department Of Electrical And Computer Engineering Univ

• SUN Decai

  Department of Electrical Engineering, University of Virginia

• TOWE Elias

  Department of Electrical Engineering, University of Virginia

• Sun Decai

  Department Of Electrical Engineering University Of Virginia

関連論文

• Quantum Dot-Size Variation and Its Impact on Emission and Absorption Characteristics : An Experimental and Theoretical Modeling Investigation
• Strain-Generated Internal Fields in Pseudomorphic (In, Ga)As/GaAs Quantum Well Structures on {11l} GaAs Substrates

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