Reaction Path of Internal Gettering of Iron in Semiconductor Silicon

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概要

• 論文の詳細を見る

• Iron is an effectiye minority carrier lifetime killer. Above 800℃ the decomposition of thermally unstable FeSi_<0.7<x<2> species yields iron in monocrystalline silicon. The solid state reactions of migrating iron can compete with the nucleation process of interstitial oxygen. One reaction path leads to the formation thermally unstable [FeB] complex. Generally, an equilibrium manifold rules the intrinsic gettering mechanism. The rate of iron gettering is a basic function of the temperature and the number and concentration of the components involved in the equilibra. At a threshold level of about 7×10^<10> atoms・cm^<-3> iron can hinder nucleation at 780℃.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Hackl Bernhard

  University Of Regensburg

• Fabry Laszlo

  Wacker-Chem,itronic GmbH

• Fabry L

  Wacker‐chemitronic Gmbh Burghausen Deu

• Fabry Laszlo

  Wacker-chem Itronic Gmbh

• RANGE Klaus-Jurgen

  University of Regensburg

関連論文

• Element Specific Diagnosis Using Microwave Reflectiorn Photocornductive Decay
• Reaction Path of Internal Gettering of Iron in Semiconductor Silicon

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