Subgrain Structure and Dislocation Density of Annealed MCT
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概要
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X-ray topography (reflexion Lang method) was employed to observe the subgrain structure of MCT (Hg_<1-x>Cd_xTe with x=0.2) after annealings under different conditions. Dislocation density (δ) was evaluated in chemically etched MCT specimens both by optical and electron scanning microscopies. Ingots were grown by the Bridgman method. Cutting, polishing and etching conditions of MCT wafers are specified. Dislocation density of wafers of ingots I (annealed 10 days at 610℃) was δ≃10^8 cm^<-2> while that of ingots II (annealed 30 days at 650℃) was of δ≃10^6 cm^<-2>. Micrographic and X-ray topography observations revealed results in agreement as regards to the mean area values of sub-grain substructure as well as to the misorientation angles between neighbouring subgrains.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Walsoe De
In Citefa (institute For Scientific And Technological Research Of The Armed Forces)
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Nollmann Ida
Prinso (program Of Research In Solid State Physics)
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TRIGUBO Alicia
CONICET (National Council for Scientific and Technological Research)