A New Type of Amorphous Silicon Solar Cell with High Thermal Stability

概要

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A new type of solar cell has been developed with hydrogenated amorphous silicon (a-Si:H). The cell structure is glass/ITO/(P-a-Si:H)/(I-a-Si:H)/(SiO_x-complexes)/(Al+O-complexes). In comparison with a conventional PIN-type a-Si solar cell glass/ITO/(P-a-Si:H)/(I-a-Si:H)/(N-a-Si:H)/Al, the new-type cell gives much higher stability against thermal degradation which is caused by internal diffusion of Si and Al at the interface of the back-side electrode on the solar cell. The conversion efficiency of the conventional cell decreased from 6% to less than 1%, but the new-type cell maintained the same efficiency of 5.2% (AMl, 100 mW/cm^2) after the storage at 120℃ for 20 days. The new-type cell has the open circuit voltage V_<oc>=0.86 (V), short-circuit current J_<sc>=12 mA/cm^2, and fill factor ff.=0.50, yielding conversion efficiency of η=5.2% under AM1.0 of 100 mW/cm^2, and V_<oc>=0.62(V), J_<sc>=18 μA/cm^2, ff.=0.73 under a white fluorescent lamp of 200 lx. These photovoltaic parameters are almost the same as those of conventional PIN-type a-Si solar cells. In this paper, fabrication and photovoltaic performance of the thermal stability of the new-type cell are discussed in comparison with conventional solar cells.
社団法人応用物理学会の論文
1991-08-15