A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding

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概要

• 論文の詳細を見る

• This paper proposes a new wafer thinning method in bonding silicon-on-insulator (SOI) technology. With this new method, thermal oxidation is performed on thin boron-doped Si films after highly selective back-etching to reduce the boron concentration in the film. The boron concentration in the silicon layer on oxide can be decreased more than 2 figures under proper thermal oxidation conditions. A 90-nm-thick silicon layer with 4×10^<17>/cm^3 boron concentration was formed on an insulator by this method. Transmission electron microscope (TEM) observation shows that the silicon layer has a highly crystalline quality. It is also found that the reflow of borophosphosilicate glass (BPSG) can effectively fill in the small surface gaps during wafer bonding.

• 社団法人応用物理学会の論文
• 1991-06-15

著者

• Imai Kazuo

  Lsi Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding

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